WeEn Semiconductors WNB325C5APPS12
This document contains data from the objective specification for product development.| Part No. | WNB325C5APPS12 |
|---|---|
| Datasheet | WNB325C5APPS12 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Hyperfast power diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low Forward Voltage Drop● Low leakage current
● Fast reverse recovery
● Bare die 3. Quick reference data Table 1. Quick reference data Symbol VRRM* Parameter repetitive peak reverse voltage Conditions IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage IF = 100 A; Tj = 25 °C Dynamic characteristics trr** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C Min Typ Max Unit - - 1200 V - - 100 A - 2.8 3.3 V - - 90 ns 4. Ordering information Table 2. Ordering information Type number Package Name WNB325C5APPS12 Wafer
DESCRIPTION
Bare die on wafer Version Die WeEn Semiconductors WNB325C5APPS12 Hyperfast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* repetitive peak reverse voltage VRWM* crest working reverse voltage VR* reverse voltage DC IF(AV)** average forward current δ = 0...
