WeEn Semiconductors WND35P08
Standard power diode
FEATURES AND BENEFITS
● Low forward voltage drop● Low leakage current
● High voltage capability
● High inrush current capability 3.
APPLICATIONS
● Input rectifier● Bypass diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) IFSM repetitive peak reverse voltage average forward current non-repetitive peak forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 97 °C; Fig. 1; Fig. 2; Fig. 3 tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Symbol Parameter Static characteristics Conditions VF forward voltage IF = 20 A; Tj = 25 °C; Fig. 6 IF = 20 A; Tj = 150 °C; Fig. 6 IF = 35 A; Tj = 25 °C; Fig. 6 IF = 35 A; Tj = 150 °C; Fig. 6 Values Unit 800 V 35 A 400 A 435 Min Typ A Max Unit - 1.05 1.25 V - 1.00 1.20 V - 1.18 1.40 V - 1.15 1.35 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 K cathode 2 A mb mb anode mounting base; connected to cathode Simplified outline mb 12 TO-220AC (SOD59) WND35P08 Standard power diode Graphic symbol K A 001aaa020 6.