• Part: WND35P16B
  • Description: Standard power diode
  • Category: Diode
  • Manufacturer: WeEn
  • Size: 519.63 KB
Download WND35P16B Datasheet PDF
WeEn
WND35P16B
description Standard reverse recovery power diode in a TO263 package. Ro HS halogen-Free 2. Features and benefits - Low forward voltage drop - Low leakage current - High voltage capability - High inrush current capability 3. Applications - Oring diode - Bypass diode - Input rectifier for bridge configurations 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Notes Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 97 °C; Fig. 1; Fig. 2; Fig. 3 IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; forward current Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Symbol Parameter Static characteristics VF forward voltage IR reverse current Conditions IF = 35 A; Tj = 25 °C; Fig. 6 VR = 1600 V; Tj = 25 °C Notes Min - Values 1600 35 400 435 Typ Max 1.18 1.40 - 50 Unit V A A A Unit V μA We En Semiconductors Standard...