WeEn Semiconductors WNS40H100CB
Dual power Schottky diode
| Part No. | WNS40H100CB |
|---|---|
| Datasheet | WNS40H100CB Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Dual power Schottky diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Trench structure● High junction temperature up to 150°C
● High efficiency
● Low forward voltage drop, negligible switching losses 3.
APPLICATIONS
● DC to DC converters● Freewheeling diode
● OR-ing diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 133 °C; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 IO(AV) average output current δ = 0.5 ; Tmb ≤ 130 °C; square-wave pulse; both diodes conducting Static characteristics VF forward voltage IF = 10 A; Tj = 25 °C; Fig. 6; per diode IF = 10 A; Tj = 125 °C; Fig. 6; per diode IF = 20 A; Tj = 25 °C; Fig. 6; per diode IF
