WeEn Semiconductors WNSC201200CW
Silicon Carbide Diode
| Part No. | WNSC201200CW |
|---|---|
| Datasheet | WNSC201200CW Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
Lead-Free● Highly stable switching performance
● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant
● High junction operating temperature capability (Tj(max) = 175 °C) 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IO(AV) limiting average output δ = 0.5 ; Tmb ≤ 129 °C; square-wave pulse; current both diodes conducting; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage IF = 10 A; Tj = 25 °C; per diode; Fig. 6 IF = 10 A; Tj = 150 °C; per diode; Fig. 6 IF = 10 A; Tj = 175 °C; per diode; Fig. 6 Dynamic characteristics Qr recovered charge IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; per diode; Fig.
