WeEn Semiconductors WNSC2D06650
Silicon Carbide Diode
FEATURES AND BENEFITS
● Highly stable switching performance● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) Tj Symbol repetitive peak reverse voltage average forward current junction temperature δ = 0.5 ; square-wave pulse; Tmb ≤ 130 °C; Fig. 1; Fig. 2; Fig. 3 Parameter Conditions Static characteristics VF forward voltage IF = 6 A; Tj = 25 °C; Fig. 5 IF = 6 A; Tj = 150 °C; Fig. 5 Dynamic characteristics Qr recovered charge IF = 6 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Values Unit 650 V 6 A 175 Min Typ °C Max Unit - 1.5 1.7 V - 1.8 2.2 V - 9 - nC WeEn Semiconductors 5. Pinning information Table 2.