WeEn Semiconductors WNSC2D301200CW-A
Silicon Carbide Diode
| Part No. | WNSC2D301200CW-A |
|---|---|
| Datasheet | WNSC2D301200CW-A Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Highly stable switching performance● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant
● High junction operating temperature capability (Tj(max) = 175 °C)
● AEC-Q101 qualified 3.
APPLICATIONS
● EV On Board Chargers● EV DC-DC converters
● Other EV HV systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IO limiting average forward Tmb ≤ 134 °C; DC; both diodes current Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 15 A; Tj = 25 °C; per diode; Fig. 5 IF = 15 A; Tj = 150 °C; per diode; Fig. 5 Qr recovered charge IF = 15 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; per diode; Fig. 7 Notes Values Unit 1200 V 30 A -55 to 175 °C Notes Min Typ Max Unit - 1.42 1.60 V - 1.90 2.30 V - 36 - nC WeEn Semiconductors WNSC2D301200CW-A Silicon Carbide Diode 5.
