WeEn Semiconductors WNSC2M12120TB
N-Channel Silicon Carbide MOSFET
| Part No. | WNSC2M12120TB |
|---|---|
| Datasheet | WNSC2M12120TB Download |
| Manufacturer |  WeEn Semiconductors |
| Description | N-Channel Silicon Carbide MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Top side cooling structure● Kelvin source configuration
● Low specific on-resistance
● Optimized dynamic performance
● Robust gate design
● 0V turn-off VGS for simple gate driver
● 100% UIS Tested
● Easy to parallel
● RoHS compliant RoHS halogen-Free 3.
APPLICATIONS
● Switching mode power supplies● UPS and energy storage systems
● Battery formation instrument
● PV MPPT and inverters
● EV Chargers
● Welding machines
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C, Tj = 175 °C Conditions VGS = 15 V; ID = 75 A; Tj = 25 °C VGS = 18 V; ID = 75 A; Tj = 25 °C Notes Notes Min - QG(tot) total gate charge ID = 75 A; VDS = 800 V; VGS = -4 V/18 V; -...
