WNSC2M360170B7
description
Silicon Carbide MOSFET in a TO263-7L plastic package, featured with easy-drive characters, designed for pact and robust systems.
2. Features and benefits
- Kelvin source configured
- Low specific on-resistance
- Optimized for low driving voltage
- 0V turn-off VGS for simple gate driving
- Robust gate design
- Optimized dynamic performance
- 100% UIS Tested
- Easy to parallel
- Ro HS pliant h Ro HS alogen-Free
Lead-Free
3. Applications
- Switch mode power supplies
- UPS & Energy storage system
- Motor Drives
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions
25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C, Tj = 175 °C
Conditions
VGS = 15 V; ID = 2 A; Tj = 25 °C VGS = 18 V; ID = 2 A; Tj = 25...
