WNSC2M45065R
description
Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.
Ro HS halogen-Free
2. Features and benefits
Lead-Free
- Separate driver source pin
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- 100% UIS Tested
- Easy to parallel
- Controllable d V/dt for optimized EMI
- Reduced cooling requirements
- Ro HS pliant
3. Applications
- Switch Mode Power Supplies
- UPS
- Battery formation instrument
- Solar string inverter and solar optimizer
- EV Charger
- Motor Drives
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Conditions
25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C, Tj = 175 °C
Conditions
VGS = 15 V; ID = 25 A; Tj = 25 °C VGS = 18 V; ID = 25 A; Tj = 25 °C
Notes
Notes Min
- Dynamic characteristics
QG(tot) total gate...
