WNSC2M60120B7-A
description
Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.
2. Features and benefits
- Kelvin source configuration
- Low specific on-resistance
- Optimized dynamic performance
- 0V turn-off VGS for simple gate driving
- 100% UIS Tested
- Easy to parallel
- Ro HS pliant
- Automotive Qualified (AEC-Q101) h Ro HS alogen-Free
- Q101 Qualified
3. Applications
- Automotive on board chargers
- Automotive DC-DC converters
- Automotive electric pressor motor drives
- HV battery management systems
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions
25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C, Tj = 175 °C
Conditions VGS = 15 V; ID = 25 A; Tj = 25...
