WeEn Semiconductors WNSC5D06650X
Silicon Carbide Diode
FEATURES AND BENEFITS
● Highly stable switching performance● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant
● Insulated package rated at 2500V RMS 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) Symbol repetitive peak reverse voltage average forward current δ = 0.5 ; square-wave pulse; Th ≤ 64 °C; Fig. 1; Fig. 2; Fig. 3 Parameter Conditions Static characteristics VF forward voltage IF = 6 A; Tj = 25 °C; Fig. 5 IF = 6 A; Tj = 150 °C; Fig. 5 Notes Values Unit 650 V 6 A Notes Min Typ Max Unit - 1.45 1.70 V - 1.80 2.20 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 K cathode 2 A mb n.c. anode mounting base; isolated Simplified outline WNSC5D06650X Silicon Carbide Diode Graphic symbol K A 001aaa020 12 6.