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WNSC6D02650P - Silicon Carbide Diode

Description

Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra compact designs.

2.

Features

  • New 6th Generation Technology.
  • Low Forward Voltage Drop.
  • Low Reverse Leakage Current.
  • High Forward Surge Capability IFSM.
  • Reduced Losses in Associated MOSFET.
  • Reduced EMI.
  • Reduced Cooling Requirements.
  • RoHS Compliant h RoHS alogen-Free Lead-Free 3.

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Datasheet Details

Part number WNSC6D02650P
Manufacturer WeEn
File Size 469.73 KB
Description Silicon Carbide Diode
Datasheet download datasheet WNSC6D02650P Datasheet
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WNSC6D02650P Silicon Carbide Diode Rev.01 - 23 February 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra compact designs. 2. Features and benefits • New 6th Generation Technology • Low Forward Voltage Drop • Low Reverse Leakage Current • High Forward Surge Capability IFSM • Reduced Losses in Associated MOSFET • Reduced EMI • Reduced Cooling Requirements • RoHS Compliant h RoHS alogen-Free Lead-Free 3. Applications • Low power SMPS • LED driver • Gate driver bootstrap charger • Noise snubber 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.
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