WeEn Semiconductors WNSC6D02650P
Silicon Carbide Diode
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
FEATURES AND BENEFITS
● New 6th Generation Technology● Low Forward Voltage Drop
● Low Reverse Leakage Current
● High Forward Surge Capability IFSM
● Reduced Losses in Associated MOSFET
● Reduced EMI
● Reduced Cooling Requirements
● RoHS Compliant h RoHS alogen-Free Lead-Free 3.
APPLICATIONS
● Low power SMPS● LED driver
● Gate driver bootstrap charger
● Noise snubber 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Fig. 1 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 2 A; Tj = 25 °C; Fig. 2 IF = 2 A; Tj = 150 °C; Fig. 2 Qr recovered charge IF = 2 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 4 Notes Values Unit 700 V 2 -55 to 175 Notes Min Typ Max A °C Unit - 1.26 1.40 V - 1.35 1.55 V - 4 - nC WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 K cathode 2 A anode WNSC6D02650P Silicon Carbide Diode Simplified outline 1 2 Graphic symbol K A 001aaa020 6.