WNSC6D02650P Description
Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra pact designs.
WNSC6D02650P Key Features
- New 6th Generation Technology
- Low Forward Voltage Drop
- Low Reverse Leakage Current
- High Forward Surge Capability IFSM
- Reduced Losses in Associated MOSFET
- Reduced EMI
- Reduced Cooling Requirements
- RoHS pliant