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WNSC6D02650P - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra compact designs.

2.

Key Features

  • New 6th Generation Technology.
  • Low Forward Voltage Drop.
  • Low Reverse Leakage Current.
  • High Forward Surge Capability IFSM.
  • Reduced Losses in Associated MOSFET.
  • Reduced EMI.
  • Reduced Cooling Requirements.
  • RoHS Compliant h RoHS alogen-Free Lead-Free 3.

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Datasheet Details

Part number WNSC6D02650P
Manufacturer WeEn
File Size 469.73 KB
Description Silicon Carbide Diode
Datasheet download datasheet WNSC6D02650P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC6D02650P Silicon Carbide Diode Rev.01 - 23 February 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra compact designs. 2. Features and benefits • New 6th Generation Technology • Low Forward Voltage Drop • Low Reverse Leakage Current • High Forward Surge Capability IFSM • Reduced Losses in Associated MOSFET • Reduced EMI • Reduced Cooling Requirements • RoHS Compliant h RoHS alogen-Free Lead-Free 3. Applications • Low power SMPS • LED driver • Gate driver bootstrap charger • Noise snubber 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.