WNSC6D02650P
Description
Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra pact designs.
Key Features
- New 6th Generation Technology
- Low Forward Voltage Drop
- Low Reverse Leakage Current
- High Forward Surge Capability IFSM
- Reduced Losses in Associated MOSFET
- Reduced Cooling Requirements
Applications
- Low power SMPS
