WeEn Semiconductors WNSC6D08650
Silicon Carbide Diode
| Part No. | WNSC6D08650 |
|---|---|
| Datasheet | WNSC6D08650 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● New 6th Generation Technology● Low Forward Voltage Drop
● Low Reverse Leakage Current
● High Forward Surge Capability IFSM
● Reduced Losses in Associated MOSFET
● Reduced EMI
● Reduced Cooling Requirements
● RoHS Compliant Lead-Free 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF continuous forward current Tj junction temperature Symbol Parameter Static characteristics Tmb ≤ 160 °C, DC; Fig. 2 Conditions VF forward voltage Dynamic characteristics IF = 8 A; Tj = 25 °C; Fig. 5 IF = 8 A; Tj = 150 °C; Fig. 5 Qr recovered charge IF = 8 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Notes Values Unit 650 V 8 A -55 to 175 °C Notes Min Typ Max Unit - 1.26 1.40 V - 1.35 1.55 V - 18 - nC WeEn Semiconductors 5. Pinning information Table 2.
