WeEn Semiconductors WNSC6D10650
Silicon Carbide Diode
| Part No. | WNSC6D10650 |
|---|---|
| Datasheet | WNSC6D10650 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● New 6th Generation Technology● Low Forward Voltage Drop
● Low Reverse Leakage Current
● High Forward Surge Capability IFSM
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant Lead-Free 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) Tj Symbol repetitive peak reverse voltage average forward current junction temperature δ = 0.5 ; square-wave pulse; Tmb ≤ 150 °C; Fig. 1; Fig. 2; Fig. 3 Parameter Conditions Static characteristics VF forward voltage IF = 10 A; Tj = 25 °C; Fig. 5 IF = 10 A; Tj = 150 °C; Fig. 5 Dynamic characteristics IF = 10 A; Tj = 175 °C; Fig. 5 Qr recovered charge IF = 10 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Notes Values 650 10 -55 to 175 Notes Min Typ Max - 1.29 1.45 - 1.45 1.65 - 1.50 1.70 - 24 - Unit V A °C Unit V V V nC WeEn Semiconductors 5.
