WeEn Semiconductors WNSC6D16650CW
Silicon Carbide Diode
| Part No. | WNSC6D16650CW |
|---|---|
| Datasheet | WNSC6D16650CW Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● New 6th Generation Technology● Low Forward Voltage Drop
● Low Reverse Leakage Current
● High Forward Surge Capability IFSM
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant Lead-Free 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF Tj Symbol repetitive peak reverse voltage continuous forward current junction temperature Parameter Tmb ≤ 151 °C; DC; Fig. 2 Conditions Static characteristics VF forward voltage IF = 16 A; Tj = 25 °C; Fig. 5 IF = 16 A; Tj = 150 °C; Fig. 5 Dynamic characteristics Qr recovered charge IF = 16 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Values Unit 650 V 16 A 175 Min Typ °C Max Unit - 1.29 1.45 V - 1.45 1.65 V - 36 - nC WeEn Semiconductors WNSC6D16650CW Silicon Carbide Diode 5. Pinning information Table 2.
