WeEn Semiconductors WNSC6D20650CW
Silicon Carbide Diode
| Part No. | WNSC6D20650CW |
|---|---|
| Datasheet | WNSC6D20650CW Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● New 6th Generation Technology● Low Forward Voltage Drop
● Low Reverse Leakage Current
● High Forward Surge Capability IFSM
● Reduced Losses in Associated MOSFET
● Reduced EMI
● Reduced Cooling Requirements
● RoHS Compliant h RoHS alogen-Free Lead-Free 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IO(AV) limiting average forward δ = 0.5 ; square-wave pulse; Tmb ≤ 140 °C; current both diodes conducting; Fig. 1; Fig. 2; Fig. 3 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 10 A; Tj = 25 °C; per diode; Fig. 5 IF = 10 A; Tj = 150 °C; per diode; Fig. 5 Qr recovered charge IF = 10 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; per diode; Fig. 7 Values Unit 650 V 20 A 175 Min Typ °C Max Unit - 1.29 1.45 V - 1.42 1.60 V - 24 - nC WeEn Semiconductors WNSC6D20650CW Silicon Carbide Diode 5.
