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WNSC6D30650BT2-A - Silicon Carbide Diode

Description

Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies.

2.

Features

  • New 6th Generation Technology.
  • Low Forward Voltage Drop.
  • Low Reverse Leakage Current.
  • High Forward Surge Capability IFSM.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription

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WNSC6D30650BT2-A Silicon Carbide Diode Rev.01 - 22 March 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies. h RoHS alogen-Free AEC - Q101 Qualified 2. Features and benefits • New 6th Generation Technology • Low Forward Voltage Drop • Low Reverse Leakage Current • High Forward Surge Capability IFSM • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • AEC-Q101 qualified 3. Applications • EV On Board Chargers • EV DC-DC converters • Other EV HV systems 4. Quick reference data Table 1.
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