WeEn Semiconductors WNSC6D40650CW
Silicon Carbide Diode
| Part No. | WNSC6D40650CW |
|---|---|
| Datasheet | WNSC6D40650CW Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● New 6th Generation Technology● Low Forward Voltage Drop
● Low Reverse Leakage Current
● High Forward Surge Capability IFSM
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant h RoHS alogen-Free Lead-Free 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions Notes Values VRRM repetitive peak reverse 650 voltage IO(AV) limiting average forward δ = 0.5 ; square-wave pulse; Tmb ≤ 138 °C; 40 current both diodes conducting; Fig. 1; Fig. 2; Fig. 3 Tj junction temperature -55 to 175 Symbol Parameter Conditions Notes Min Typ Max Static characteristics VF forward voltage Dynamic characteristics IF = 20 A; Tj = 25 °C; per diode; Fig. 5 IF = 20 A; Tj = 150 °C; per diode; Fig. 5 - 1.26 1.40 - 1.35 1.55 Qr recovered charge IF = 20 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; per diode; Fig.
