WeEn Semiconductors WNSCM160120W
N-Channel Silicon Carbide MOSFET
| Part No. | WNSCM160120W |
|---|---|
| Datasheet | WNSCM160120W Download |
| Manufacturer |  WeEn Semiconductors |
| Description | N-Channel Silicon Carbide MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low on-resistance● Fast switching speed
● 0V turn-off gate voltage for simple gate drive
● 100% UIS Tested
● Easy to parallel
● Controllable dV/dt for optimized EMI
● Reduced cooling requirements
● RoHS compliant 3.
APPLICATIONS
● Switch Mode Power Supplies● UPS
● Solar string inverter and solar optimizer
● EV Charger
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 20 V; Tmb = 25 °C Tmb = 25 °C VGS = 20 V; ID = 10 A; Tj = 25 °C Notes Min Typ Max Unit - - - - - - -55 - 1200 V 24 A 155 W 175 °C - 160 196 mΩ QG(tot) total gate charge QGD gate-drain charge Source-drain diode ID = 10 A; VDS = 800 V; VGS = 0V/20 V; Tj = 25 °C - 35 - nC - 8 - nC Qr recovered charge ISD = 10 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C - 78 - nC WeEn Semiconductors WNSCM160120W N-Channel Silicon Carbide MOSFET 5.
