WeEn Semiconductors WNSCM80120W
N-Channel Silicon Carbide MOSFET
| Part No. | WNSCM80120W |
|---|---|
| Datasheet | WNSCM80120W Download |
| Manufacturer |  WeEn Semiconductors |
| Description | N-Channel Silicon Carbide MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low on-resistance● Fast switching speed
● 0V turn-off gate voltage for simple gate drive
● Easy to parallel
● Controllable dV/dt for optimized EMI
● Reduced cooling requirements
● RoHS compliant 3.
APPLICATIONS
● Switch Mode Power Supplies● UPS
● Solar string inverter and solar optimizer
● EV Charger
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions Notes Min Typ Max Unit VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics 25 °C ≤ Tj ≤ 175 °C VGS = 20 V; Tmb = 25 °C Tmb = 25 °C VGS = 20 V; ID = 20 A; Tj = 25 °C - - - - - - -55 - 1200 V 42 A 230 W 175 °C - 80 98 mΩ QG(tot) total gate charge QGD gate-drain charge Source-drain diode ID = 20 A; VDS = 800 V; VGS = 0V/20 V; Tj = 25 °C - 59 - nC - 11 - nC Qr recovered charge ISD = 20 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C - 108 - nC WeEn Semiconductors WNSCM80120W N-Channel Silicon Carbide MOSFET 5.
