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WNSCM80120W - N-Channel Silicon Carbide MOSFET

Description

Silicon Carbide MOSFET in a 3-lead TO247 plastic package, designed for high frequency, high efficiency systems.

2.

Features

  • Low on-resistance.
  • Fast switching speed.
  • 0V turn-off gate voltage for simple gate drive.
  • Easy to parallel.
  • Controllable dV/dt for optimized EMI.
  • Reduced cooling requirements.
  • RoHS compliant 3.

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Datasheet Details

Part number WNSCM80120W
Manufacturer WeEn
File Size 736.49 KB
Description N-Channel Silicon Carbide MOSFET
Datasheet download datasheet WNSCM80120W Datasheet

Full PDF Text Transcription

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WNSCM80120W N-Channel Silicon Carbide MOSFET Rev.01 - 30 November 2022 Product data sheet 1. General description Silicon Carbide MOSFET in a 3-lead TO247 plastic package, designed for high frequency, high efficiency systems. RoHS halogen-Free 2. Features and benefits • Low on-resistance • Fast switching speed • 0V turn-off gate voltage for simple gate drive • Easy to parallel • Controllable dV/dt for optimized EMI • Reduced cooling requirements • RoHS compliant 3. Applications • Switch Mode Power Supplies • UPS • Solar string inverter and solar optimizer • EV Charger • Motor Drives 4. Quick reference data Table 1.
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