WeEn Semiconductors WSJM65R099DTL
WSJM65R099DTL is a high voltage N-channel MOSFET in TOLL package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density RoHS halogen-Free 2.| Part No. | WSJM65R099DTL |
|---|---|
| Datasheet | WSJM65R099DTL Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Super-Junction Power MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Superior FOM RDS(on) * Qg● Extremely low switching loss
● Integrated ultrafast body diode
● 100% avalanche tested 3.
APPLICATIONS
● LLC applications● LEV charger
● Server power
● LED power 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Tmb = 25 °C Ptot power dissipation Tmb = 25 °C Tj junction temperature Symbol Parameter Conditions Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics VGS = 10 V, ID = 16 A QG(tot) total gate charge ID = 16 A; VDS = 400 V; VGS = 10 V EOSS coss stored erergy VGS = 0 V; VDS = 0 to 400 V Notes Values Unit 650 ±30 25 147 -55 to 150 Notes Min Typ Max V V A W °C Unit - 87 99 mΩ - 57 - nC - 7.0 - μJ WeEn Semiconductors WSJM65R099DTL Super-Junction Power MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 G gate 2 SS source sence 3-8 S source mb D mounting base; connected to drain Simplified outline mb 123 4 5 6 78 Graphic symbol D G SS sym303 S 6.
