WSJM65R120W
description
WSJM65R120W is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)
- Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.
Ro HS halogen-Free
2. Features and benefits
- Superior FOM RDS(on)
- Qg
- Extremely low switching loss
- 100% avalanche tested
3. Applications
- high efficiency power supplies
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
VGS gate-source voltage
ID continuous drain current
Ptot power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions
Tmb = 25 °C Tmb = 25 °C Conditions VGS = 10 V, ID = 15 A
QG(tot) EOSS total gate charge coss stored erergy
ID = 15 A; VDS = 400 V; VGS = 10 V VGS = 0 V; VDS = 0 to 400...
