WSJM65R170Y Description
WSJM65R170Y is a high voltage N-channel MOSFET in IITO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.
WSJM65R170Y Key Features
- Superior FOM RDS(on)
- Extremely low switching loss
- 100% avalanche tested
- Internally insulated package with isolated mounting base