WeEn Semiconductors WSJM65R360B
WSJM65R360B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.| Part No. | WSJM65R360B |
|---|---|
| Datasheet | WSJM65R360B Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Super-Junction Power MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Superior FOM RDS(on)*Qg● Extremely low switching loss
● 100% avalanche tested 3.
APPLICATIONS
● PFC stage and/or DC/DC converters in various high efficiency power suppliers, e.g. TV/sever/telecom/lighting power suppliers● Inverters and motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions Tmb = 25 °C Tmb = 25 °C Conditions VGS = 10 V, ID = 5.5 A QG(tot) EOSS total gate charge coss stored erergy ID = 5.5 A; VDS = 400 V; VGS = 10 V VGS = 0 V; VDS = 0 to 400 V Notes Values Unit 650 ±30 10 96 -55 to 150 Notes Min Typ Max V V A W °C Unit - 335 360 mΩ - 18 - nC - 2.6 - μJ WeEn Semiconductors WSJM65R360B Super-Junction Power MOSFET 5. Pinning information Table 2. Pinning informa...
