WSJT60R028DW Description
WSJT60R028DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density. h RoHS alogen-Free Lead-Free.
WSJT60R028DW Key Features
- Superior FOM RDS(on)
- Extremely low switching loss
- Integrated ultrafast body diode
- 100% avalanche tested