WeEn Semiconductors WSJT65R075DW
WSJT65R075DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.| Part No. | WSJT65R075DW |
|---|---|
| Datasheet | WSJT65R075DW Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Super-Junction Power MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Superior FOM RDS(on)*Qg● Extremely low switching loss
● Integrated ultrafast body diode
● 100% avalanche tested 3.
APPLICATIONS
● LLC applications● LEV charger
● Server power
● LED power 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions Tmb = 25 °C Tmb = 25 °C Conditions VGS = 10 V, ID = 25 A QG(tot) EOSS total gate charge coss stored erergy ID = 25 A; VDS = 400 V; VGS = 10 V VGS = 0 V; VDS = 0 to 400 V Notes Values Unit 650 ±30 50 481 -55 to 150 Notes Min Typ Max V V A W °C Unit - 55 70 mΩ - 70 - nC - 10.7 - μJ WeEn Semiconductors WSJT65R075DW Super-Junction Power MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline 123 Graphic symbol D G sym300 S 6.
