WeEn Semiconductors WTD120TBS12
SCR
| Part No. | WTD120TBS12 |
|---|---|
| Datasheet | WTD120TBS12 Download |
| Manufacturer |  WeEn Semiconductors |
| Description | SCR |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Planar passivated thyristor chips for voltage ruggedness and reliability● Top-side cooling
● Compact design
● One screw mounting
● Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DBC)
● Package is RoHS compliant 3.
APPLICATIONS
● UPS 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VDRM VRRM IT(RMS) IF(AV) ITSM repetitive peak forward voltage repetitive peak reverse voltage RMS on-state current average forward current half sine wave; Th ≤ 95 °C δ = 0.5; square-wave pulse non-repetitive peak onstate current half sine wave; Tj(init) = 25 °C; tp = 10 ms half sine wave; Tj(init) = 125 °C; tp = 10 ms half sine wave; Tj(init) = 25 °C; tp = 8.3 ms half sine wave; Tj(init) = 125 °C; tp = 8.3 ms IFSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms state current half sine wave; Tj(init) = 125 °C; tp = 10 ms half sine wave; Tj(init) = 25 °C; tp = 8.3 ms half sine...
