WeEn Semiconductors Z0107NA
4Q Triac
FEATURES AND BENEFITS
● High blocking voltage capability● Very sensitive gate
● Planar passivated for voltage ruggedness and reliability
● Triggering in all four quadrants
● Direct interfacing to logic level ICs
● Direct interfacing to low power gate drive circuits 3.
APPLICATIONS
● Industrial process control● General purpose low power motor control
● Home appliances
● Low power AC Fan controllers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Symbol Parameter Conditions Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig.