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WCMA1016U4X - 64K x 16 Static RAM

General Description

of read and write modes.

The WCMA1016U4X is available in a 48-ball FBGA package.

The WCMA1016U4X is a high-performance CMOS static RAM organized as 64K words by 16 bits.

Key Features

  • High Speed.
  • 55ns and 70ns availability.
  • Low voltage range.
  • 2.7V.
  • 3.6V.
  • Ultra-low active power.
  • Low standby power.
  • Easy memory expansion with CE and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable an.

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Datasheet Details

Part number WCMA1016U4X
Manufacturer Weida Semiconductor
File Size 347.63 KB
Description 64K x 16 Static RAM
Datasheet download datasheet WCMA1016U4X Datasheet

Full PDF Text Transcription for WCMA1016U4X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WCMA1016U4X. For precise diagrams, and layout, please refer to the original PDF.

1 WCMA1016U4X 64K x 16 Static RAM Features • High Speed — 55ns and 70ns availability • Low voltage range — 2.7V−3.6V • Ultra-low active power • Low standby power • Easy m...

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ange — 2.7V−3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CE and OE features • Automatic power-down when deselected • CMOS for optimum speed/power and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.