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WCMA2016U4B - 128K x 16 Static RAM

General Description

of read and write modes.

The WCMA2016U4B is available in a 48-ball FBGA package.

The WCMA2016U4B is a high-performance CMOS static RAMs organized as 128K words by 16 bits.

Key Features

  • High Speed.
  • 55ns and 70ns speed availability.
  • Low Voltage range:.
  • 2.7V-3.3V.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1MHz.
  • Typical active current: 7 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power be put into standby mode reducing power consumption by more than 99% when deselect.

📥 Download Datasheet

Datasheet Details

Part number WCMA2016U4B
Manufacturer Weida Semiconductor
File Size 278.39 KB
Description 128K x 16 Static RAM
Datasheet download datasheet WCMA2016U4B Datasheet

Full PDF Text Transcription for WCMA2016U4B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WCMA2016U4B. For precise diagrams, and layout, please refer to the original PDF.

1*WCMA2016U4B WCMA2016U4B 128K x 16 Static RAM Features • High Speed — 55ns and 70ns speed availability • Low Voltage range: — 2.7V-3.3V • Ultra-low active power — Typica...

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ity • Low Voltage range: — 2.7V-3.3V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1MHz • • • • — Typical active current: 7 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15 ) are placed in a high-impedance state when: deselected ( CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or du