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WCMA4016U1X - 256K x 16 Static RAM

General Description

of read and write modes.

The WCMA4016U1X is a high-performance CMOS static RAM organized as 262,144 words by 16 bits.

Key Features

  • Low voltage range: 2.7V.
  • 3.6V.
  • Ultra-low active, standby power.
  • Easy memory expansion with CE1 and CE2 and OE features.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low En.

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Datasheet Details

Part number WCMA4016U1X
Manufacturer Weida Semiconductor
File Size 197.11 KB
Description 256K x 16 Static RAM
Datasheet download datasheet WCMA4016U1X Datasheet

Full PDF Text Transcription for WCMA4016U1X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WCMA4016U1X. For precise diagrams, and layout, please refer to the original PDF.

Y62147BV L™ WCMA4016U1X 256K x 16 Static RAM Features • Low voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE1 and CE2 and OE fea...

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ive, standby power • Easy memory expansion with CE1 and CE2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.