Weida Semiconductor WCMB2016R4X
The WCMB2016R4X is available in a 48-ball FBGA package. This device features advanced circuit design to provide ultra-low active current. This device is ideal for portable applications such as cellular telephones.| Part No. | WCMB2016R4X |
|---|---|
| Datasheet | WCMB2016R4X Download |
| Manufacturer | Weida Semiconductor |
| Description | 128K x 16 Static RAM |
| Buy | Stock & Price |
FEATURES
● Low voltage range: — 1.65V−1.95V● Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz
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● — Typical Active Current: 1.5 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
