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WCMB2016R4X
128K x 16 Static RAM
Features
• Low voltage range: — 1.65V−1.95V • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz • • • • — Typical Active Current: 1.5 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.
WCMB2016R4X Datasheet
