WCMC1616V9X
Features
- 1T Cell, PSRAM Architecture
- High speed: 70 ns
- Wide Voltage range:
- VCC range: 2.7V to 3.3V
- Low active power
- Typical active current: 2 m A @ f = 1 MHz
- Typical active current: 13 m A @ f = f MAX
- Low standby power
- Automatic power-down when deselected
Functional Description
[1]
The WCMC1616V9X is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life TM
(Mo BL® ) in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption by more than 99% when deselected using CE LOW, CE 2 HIGH or both BHE and BLE are HIGH. The input/output pins (I/O0 through I/O 1 5) are placed in a high-impedance state when: deselected (CE HIGH, CE 2 LOW OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable...
