WCMC2016V1X - 128K x 16 Pseudo Static RAM DIE

Description

Die (25-30 mil) in wafer form.

Die (14 mil) in wafer form.

Die (11 mil) in wafer form.

WCMC2016V1X 128K x 16 Pseudo Static RAM DIE by Weida Semiconductor - Datasheet Preview — Datasheet preview – WCMC2016V1X

Datasheet Details

Part number	WCMC2016V1X
Manufacturer	Weida Semiconductor
File Size	167.62 KB
Description	128K x 16 Pseudo Static RAM DIE
Datasheet	WCMC2016V1X Datasheet
Additional preview pages of the WCMC2016V1X datasheet.

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Full PDF Text Transcription

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ADVANCE INFORMATION General Physical Specification WCMC2016V1X 128K x 16 Pseudo Static RAM DIE Substrate Connection Req.: Ground Wafer Diameter [mm]: 200.00 Die Size [µm]: 4010.74 x 1565.84 Step Size [µm]: 4095.44 x 1650.89 Scribe Size [µm]: 84.70 x 84.94 Pad Count: 64 Pad Size [µm]: 73.6 x 73.6 For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress Semiconductor Website (http://www.cypress.com). Mfg Part Number: GC2016V5A Die Part Number: Die Technology: PowerChip 0.165 µm Metal I: 420 nm TiN/AlCu Metal II: 880 nm TiN/Ti/AlCu/TiN Metal III: None Die Passivation: 780nm P-Si3N4 + Polyimide Product Thickness Guide Code XW XW14 XW11 Description Die (25-30 mil) in wafer form. Die (14 mil) in wafer form.

Published: Jan 31, 2010 |