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WCMC2016V1X - 128K x 16 Pseudo Static RAM DIE

General Description

Die (25-30 mil) in wafer form.

Die (14 mil) in wafer form.

Die (11 mil) in wafer form.

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Datasheet Details

Part number WCMC2016V1X
Manufacturer Weida Semiconductor
File Size 167.62 KB
Description 128K x 16 Pseudo Static RAM DIE
Datasheet download datasheet WCMC2016V1X Datasheet

Full PDF Text Transcription for WCMC2016V1X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WCMC2016V1X. For precise diagrams, and layout, please refer to the original PDF.

ADVANCE INFORMATION General Physical Specification WCMC2016V1X 128K x 16 Pseudo Static RAM DIE Substrate Connection Req.: Ground Wafer Diameter [mm]: 200.00 Die Size [µm]...

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rate Connection Req.: Ground Wafer Diameter [mm]: 200.00 Die Size [µm]: 4010.74 x 1565.84 Step Size [µm]: 4095.44 x 1650.89 Scribe Size [µm]: 84.70 x 84.94 Pad Count: 64 Pad Size [µm]: 73.6 x 73.6 For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress Semiconductor Website (http://www.cypress.com). Mfg Part Number: GC2016V5A Die Part Number: Die Technology: PowerChip 0.165 µm Metal I: 420 nm TiN/AlCu Metal II: 880 nm TiN/Ti/AlCu/TiN Metal III: None Die Passivation: 780nm P-Si3N4 + Polyimide Product Thickness Guide Code XW XW14 XW11 Description Die (25-30 mil) in

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