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WCMC8016V9X - 8Mb (512K x 16) Pseudo Static RAM

Description

The WCMC8016V9X is a high-performance CMOS pseudo static RAM organized as 512K words by 16 bits that supports an asynchronous memory interface.

Features

  • Wide voltage range: 2.70V.
  • 3.30V.
  • Access Time: 70ns.
  • Ultra-low active power.
  • Typical active current: 2.0mA @ f = 1 MHz.
  • Typical active current: 11mA @ f = fmax Ultra low standby power Easy memory expansion with CE, CE2, and OE features Automatic power-down when deselected CMOS for optimum speed/power Offered in a 48 Ball BGA Package This is ideal for providing More Battery Life® (MoBL® ) in por.

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Datasheet Details

Part number WCMC8016V9X
Manufacturer Weida Semiconductor
File Size 255.33 KB
Description 8Mb (512K x 16) Pseudo Static RAM
Datasheet download datasheet WCMC8016V9X Datasheet
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ADVANCE INFORMATION WCMC8016V9X 8Mb (512K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.0mA @ f = 1 MHz • • • • • — Typical active current: 11mA @ f = fmax Ultra low standby power Easy memory expansion with CE, CE2, and OE features Automatic power-down when deselected CMOS for optimum speed/power Offered in a 48 Ball BGA Package This is ideal for providing More Battery Life® (MoBL® ) in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption by more than 99% when deselected using CE LOW, CE2 HIGH or both BHE and BLE are HIGH.
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