2N4003K Datasheet | Weitron Technology

.DataSheet.co.kr N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN - - Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. - Low Gate Charge for Fast Switching. - ESD Protected Gate. - Minimum Breakdown Voltage Rating of 30V. Features : - Gate Pretection Diode SOURCE 2 DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE 3 1 2 Application: - Level Shifters - Level Switches - Low Side Load Switches - Portable Applications SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 ,Steady State Unless Otherwise Specified) Symbol V DS VG S Value 30 ±20 0.5 0.37 0.69 0.56 0.40 0.83...