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2N4003K
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
*
* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V.
Features:
* Gate Pretection Diode
SOURCE 2
DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE
3 1 2
Application:
* Level Shifters * Level Switches * Low Side Load Switches * Portable Applications
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 ,Steady State
Unless Otherwise Specified) Symbol
V DS VG S
Value
30 ±20 0.5 0.37 0.69 0.56 0.40 0.83 1.7 180 150 300 +150 -55~+150 1.
2N4003K Datasheet
