Weitron Technology 2SC1384
NPN Transistor
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=500 mAdc, VCE=10 Vdc) (IC=1.0 Adc, VCE=5.0 Vdc) Collector-Emitter Saturation Voltage (IC=500 mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (IC=500 Adc, IB=50mAdc) hFE (1) hFE (2) VCE(sat) VBE(sat) 85 50 340 0.4 1.2 Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=50 mAdc, VCE=10 Vdc, f=30MHz) fT 100 MHz CLASSIFICATION OF hFE Rank Range Q 85-170 R 120-240 H 170-340 WEITRON 2SC1383/2SC1384 1.2 1.5 T a=25û C C ollector power dissipation P C ( W ) 1.0 1.25 C ollector current I C ( A ) I B =10mA 9mA 8mA 7mA 6mA 5mA 4mA 0.8 1.0 0.6 0.75 0.4 0.5 3mA 2mA 0.2 0.25 1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient tempera ture Ta (û C) 0 2 4 16 8 0 FIG1. Total Power Dissipation Vs Ambient Temperature 1.2 V C E =10V T a=25û C 1.0 C ollector to emitter voltage VCE (V ) FIG2. Static Characteristic C ollector to emitter saturation v...