Weitron Technology 2SD2098
NPN Plastic-Encapsulate Transistor
| Part No. | 2SD2098 |
|---|---|
| Datasheet | 2SD2098 Download |
| Manufacturer |  Weitron Technology |
| Description | NPN Plastic-Encapsulate Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature Value 20 50 6.0 5.0 10 0.5 150, -55 to +150 Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) (1) W PC Tj , Tstg % C Device Marking 2SD2098Q=AHQ, 2SD2098R=AHRELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 50 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 50 µAdc, IC=0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB=5.0 Vdc, IC =0) Note: 1. Single pulse pw=10ms Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 20 50 6.0 Max 0.5 0.5 Unit Vdc Vdc Vdc uAdc uAdc WE ITR O N 2SD2098ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.5 Adc, VCE=2.0 Vdc) Collector-Emi...
