2SD2098
NPN Plastic-Encapsulate Transistor
SOT-89
1. BASE 2. COLLECTOR 3. EMITTER
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature
..
Value
20 50 6.0 5.0 10 0.5 150, -55 to +150
Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) (1) W
Tj , Tstg
% C
Device Marking
2SD2098Q=AHQ, 2SD2098R=AHR
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 m Adc, IB=0) Collector-Base Breakdown Voltage (IC= 50 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 50 µAdc, IC=0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB=5.0 Vdc, IC =0) Note: 1. Single pulse pw=10ms Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 20 50 6.0 Max 0.5 0.5 Unit Vdc Vdc Vdc u Adc u Adc
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ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)...
