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M8050LT1
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
V CEO Value 25 40 5.0 800
300 2.4 417
0.1 100 100
25 40 5.0 0.15 0.15 u u
35 4.0
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M8050LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max UnitM
ON CHARACTERISTICS
DC Current Gain (IC=100 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) hFE (1)
100 600
-
VCE(sat)
-
0.5
Vdc
CLASSIFICATION OF hFE(1) Rank Range Marking P 100-200 80P Q 150-300 1YC R 200-400 1YE S 300-600 80S
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M8050LT1
1000 1
100
Saturation Voltage (V)
VCE=1V
hFE
0.1
10
VCE(sat) @ IC=10IB
1 0.001
0.01 0.01 0.