Weitron Technology MMBT2222
NPN Transistors
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc, TA=-55 C) (IC=150 mAdc, VCE=10 Vdc) (3) (IC=150 mAdc, VCE=1.0Vdc) (3) (IC=500 mAdc, VCE=10 Vdc) (3) Collector-Emitter Saturation Voltage (3) (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (3) (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) 0.6 300 0.4 0.3 1.6 1.0 1.3 1.2 2.6 2.0 Vdc Vdc MMBT2222A ONLY MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (4) (IC=20 mAdc, VCE=20 Vdc, f=100MHz) Output Capacitance (VCB=10 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc,...