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MUN5111 Series Bias Resistor Transistor PNP Silicon
COLLECTOR 3 BASE 1
R1 R2
3 1 2
2 EMITTER
SOT-323(SC-70)
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value 50 50 100 Unit Vdc Vdc mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C
Symbol PD
Max 202 (1) 310 (2) 1.6 (1) 2.5 (2) 618 403 -55 to +150
Unit mW mW/ C C/W C
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Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range
R θJA TJ,Tstg
1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.
MUN5111 Datasheet
