Weitron Technology MUN5111
PNP Transistor
ELECTRICAL CHARACTERISTICS
(TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Current (VCB=-50 V, IE =0) Collector-Emitter Cutoff Current (VCE=-50V, IB =0) Emitter-Base Cutoff Current (VEB=6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 V V nA nA mA On Characteristics Collector-Emitter Saturation Voltage (IC =10mA, IE =0.3mA) (I C=10mA, I B =5mA) MUN5130/MUN5131 (IC =10mA, I B =1mA) MUN5115/MUN5116 MUN5132/MUN5133/MUN5134 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% VCE(sat) 0.25 Vdc WEITRON MUN5111 SeriesELECTRICAL CHARACTERISTICS
(TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics On C...