Weitron Technology PZT159
PNP Silicon Planar High Current Transistor
ABSOLUTE MAXIMUM RATINGS
(TA=25 C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Collector Current Total Device Disspation TA=25°C Junction Temperature Storage, Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -100 -60 -6 -5 -15 3 +150 -55 to +150 Unit V V V A A W ˚C ˚C *Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min). Device Marking PZT159 =159ELECTRICAL CHARACTERISTICS
Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage(1) IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-100µA, IC=0 Collector Cut-O Current VCB=-80V, IE=0 Collector Cut-O Current VCES =-60V Emitter-Cut-O Current VEB=-6V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO Min -100 -60 -6 Max Max -50 -50 -10 Unit V V V nA nA nA WEITRON 1/4 11-Jul-07 PZT159ELECTRICAL CHARACTERISTICS
(TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTE...