Weitron Technology PZTA44
NPN Silicon Planar Epitaxial Transistor
| Part No. | PZTA44 |
|---|---|
| Datasheet | PZTA44 Download |
| Manufacturer |  Weitron Technology |
| Description | NPN Silicon Planar Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj TstgELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC =1mA) Symbol V(BR)CEO Min 400 500 6 - Typ - Max 100 500 100 Unit V V V nA nA nA Collector-Base Breakdown Voltage (IC =100µA) (IE =10 µA) V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 VCE(sat) Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current (VCB =400V) Collector Cutoff Current (VCB=400V) Emitter-Base Cutoff Current (VEB=4V) DC Current Gain (VCE = (VCE = (VCE = (VCE = 10V, 10V, 10V, 10V, IC = IC = IC = IC = 1mA) 10mA) 50mA) 100mA) 40 50 45 40 - 4 300 375 750 750 6 - Collector-Emitter Saturation Voltages (IC = 20mA, I B = 2mA) (IC = 50mA, I B = 5mA) mV mV pF Base-Emitter Saturation Voltages (IC = 10mA, I B = 1mA) VBE(sat) Cob Output Capacit...
