The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PZTA44
NPN Silicon Planar Epitaxial Transistor
BASE 1 3 EMITTER COLLECTOR 2, 4
1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR
4 1
2
3
SOT-223
Value 400 500 6 300 2 150 -55 to +150 Unit V V V mA W ˚C ˚C
ABSOLUTE MAXIMUM RATINGS (TA=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Emitter Breakdown Voltage
(IC =1mA)
Symbol
V(BR)CEO
www.DataSheet4U.