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WT2310
N-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT 3 AMPERS DRAIN SOUCE VOLTAGE 60 VOLTAGE
Features:
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
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Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R
JA
Value
60 ±20 3.0 2.3 10 1.38 90 -55~+150
Unit
V
A
W ℃/W ℃
Operating Junction and Storage Temperature Range
TJ, Tstg
Device Marking
WT2310=2310
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WT2310 Datasheet
