Weitron Technology WT3401
Surface Mount P-Channel Enhancement Mode MOSFET
FEATURES
: *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23MAXIMUM RATINGS
(TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C +20 -3 -10 -1.25 1.25 100 -55 to 150 Device Marking WT3401=T01 WEITRON WT-3401ELECTRICAL CHARACTERISTICS
Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA +20V VDS=0V, VGS= Gate-Source Leakage Current Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V,...