Weitron Technology WTC2312
N-Channel Enhancement Mode Power MOSFET
| Part No. | WTC2312 |
|---|---|
| Datasheet | WTC2312 Download |
| Manufacturer |  Weitron Technology |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive * Rugged and Reliable * Lower On-Resistance 2 SOURCE 3 1 2 SOT-23 Application: * Power Management in Notebook Computer. * Portable Equipment. * Battery Powered System.MAXIMUM RATINGS
(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,VGS@4.5V(TA=25°C) ,VGS@4.5V(TA=70°C) Pulsed Drain Current 1, 2 Total Power Dissipation(TA=25°C) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range Unless Otherwise Specified) Symbol V DS VG S ID IDM PD R θJA TJ Tstg Value 20 ±8 4.9 3.4 15 0.75 140 +150 -55~+150 Unit V A W °C /W °C °C Device Marking WTC2312=N12 WEITRON 1/6 Rev.B 04-Aug-09 WTC2312ELECTRICAL CHARACTERISTICS
(TA =25°C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V G S =0, ID Gate-Source Threshold Voltage V DS =V GS...
