WTC2312 Description
WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE.
WTC2312 Key Features
- Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V
- Capable of 2.5V gate drive
- Rugged and Reliable
- Lower On-Resistance
- Power Management in Notebook puter
- Portable Equipment
- Battery Powered System
- 15 40 48 31 11.2 1.4 2.2
- 50 0 50 100 150