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WTC6401 - Enhancement Mode Power MOSFET

Key Features

  • GATE SOURCE 2 3 1 2 SOT-23.

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Datasheet Details

Part number WTC6401
Manufacturer Weitron Technology
File Size 760.13 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet WTC6401 Datasheet

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Other Datasheets by Weitron Technology

Part Number Description
WTC2301 Enhancement Mode Power MOSFET
WTC2301 P-Channel Enhancement Mode Power MOSFET
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WTC2303 Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WTC6401 P-Channel Enhancement Mode Power MOSFET 1 3 DRAIN DRAIN CURRENT -4.3 AMPERES DRAIN SOURCE VOLTAGE -12 VOLTAGE *Super High Dense Cell Design For Low RDS(ON) www.DataSheet4U.com R DS(ON) <50mΩ@V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *SOT-23 Package Features: GATE SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current 1 Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -12 ±8 -4.3 -3.4 -12 1.