• Part: WTC6401
  • Description: Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Weitron Technology
  • Size: 760.13 KB
Download WTC6401 Datasheet PDF
Weitron Technology
WTC6401
WTC6401 is Enhancement Mode Power MOSFET manufactured by Weitron Technology.
Features : GATE SOURCE 3 1 2 SOT-23 Applications - Power Management in Notebook puter - Portable Equipment - Battery Powered System Maximum Ratings(T =25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -12 ±8 -4.3 -3.4 -12 1.38 90 - 55~+150 Unit Total Power Dissipation(T A =25˚C) Maximum Thermal Resistace Junction-ambient 3 Operating Junction and Storage Temperature Range W ˚C/W ˚C Device Marking WTC6401=6401 http:.weitron..tw WEITRON 1/6 06-May-05 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250μA .. Gate-Source Threshold Voltage VDS=VGS,ID=-250μA Gate-Source Leakage current VGS = ±8V Drain-Source Leakage Current(Tj=25˚C) VDS =-16V,V GS =0 Drain-Source Leakage Current(Tj=70˚C) VDS =-12V,V GS =0 Drain-Source On-Resistance 2 VGS =-4.5V,I D=-4.3A VGS =-2.5V,I D=-2.5A VGS =-1.8V,I D=-2.0A Forward Transconductance VDS =-5.0,I D=-4.0A R DS(o n) 12 50 85 125 mΩ IDSS -25 BV DSS VGS(Th) IGSS -12 V -1.0 ± 100 -1 μA n A g fs Dynamic Input Capacitance VGS =0V,VDS =-15V,f=1.0MHz Output Capacitance VGS =0V,VDS =-15V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-15V,f=1.0MHz C iss C oss Crss 985 180 160 1580 p F http:.weitron..tw WEITRON 2/6...