DESCRIPTION
SOT-89 FEATURES
Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide ASO ABSOLUTE MAXIMUM RATINGS
at TA = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) (Note1) Total Power Dissipation Note 1: Single pulse, PW=10ms Symbol Tj Tstg VCBO VCEO VEBO IC ICP PD Ratings +150 -55~+150 60 50 6 3 6 0.5 Unit V V V A A W ELECTRICAL CHARACTERISTICS
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob tstg tf Min. 60 50 6 100 - (Ta = 25 , unless otherwise stated) Typ. Max. Unit Test Conditions V IC=10uA , IE=0 V IC=1mA, IB=0 V IE=10uA ,IC=0 1 uA VCB=40V, IE=0 1 uA VEB=4V, IC=0 0.19 0.5 V IC=2A, IB=100mA 0.94 1.2 V IC=2A, IB=100mA 560 VCE=2V, IC=100mA 150 MHz VCE=10V, IC=50mA 25 pF VCB=10V, IE=0, f=1MHz 650 ns See test circuit 35 ns *Measured under pulse condition. Pu...
Weitron Technology
