Weitron Technology WTM1766
EPITAXIAL PLANAR TRANSISTOR
| Part No. | WTM1766 |
|---|---|
| Datasheet | WTM1766 Download |
| Manufacturer |  Weitron Technology |
| Description | EPITAXIAL PLANAR TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 40 32 5.0 2.0 500 150 -55-150 Units V V V A mW ℃ ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 conditions MIN 40 32 5 TYP MAX UNIT V V V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance 1 1 82 390 0.8 100 30 μA μA VCE=3V, IC=500mA IC=2A, IB=0.2A VCE=5V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz V MHz pF CLASSIFICATION OF Rank Range Marking hFE(1) P 82-180...
